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Photoresists
Meeting Generations of Lithography Process Requirements
DuPont offers a robust, production-proven photoresist product line with materials options that meet the requirements across generations of lithography processes from 365nm down to 13.5nm wavelengths, and exposures that achieve features from 280nm to 20nm.
The quest to achieve ever smaller technology nodes means photoresists must offer higher and better resolution with a wider depth of focus, with fewer defects. At the same time, legacy nodes rely on tried and true formulations. From our i-line/g-line, to our 193 and KrF product families, DuPont has photoresists to match your needs.
When combined with DuPont’s etching, developing and ancillary products, you get a total materials solution to support your semiconductor manufacturing processes.
Our broad portfolio also allows us to tailor photoresists to meet specific customer specifications.
i-Line Products
Our legacy i-Line (365nm) photoresists are formulated to support different thickness requirements while achieving high resolution and low defects.
Related Products:
- SPR™ 3 Photoresist
- SPR™ 700 Photoresist
- MCPR™ Photoresists
DUV Products
Our DUV (248nm) photoresists show excellent product performances with low defects for various applications.
- UV™ Positive Tone Resist supports exposure and early development. It achieves high resolution to accommodate smaller pattern sizes.
- UVN™ Negative Tone Resist, in which the exposure is developed in reverse. Scum-free, UVN™ resist is the optimal solution for deep-trench patterning.
- SL™ Resist is our low-temperature resist that bakes at less than 100C. It features high resolution and is suitable for small pattern sizes.
EPIC™ Photoresists
EPIC™ Photoresists are a series of 193 resists widely used for 193 processes with and without topcoats. DuPont’s EPIC™ IM Resist is designed for the unique environment created by immersion lithography, in which water between the lens and the wafer enables exposure of finer patterns.
- Prevents resist components that leach into water from penetrating the resist film
- Creates a barrier layer between the water and the resist, making a barrier layer unnecessary, saving customers time and money
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What are Photoresists?
Today’s photoresists must serve a broad and wide spectrum of coverage in terms of bake temperature and exposure times. DuPont has developed a comprehensive product line to support both legacy and next-generation lithography processes.
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Supporting Semiconductor Device Nodes
DuPont also offers Nanopure™ slurries for silicon wafer polishing and the ILD™ 3000 -5000 series for interlayer dielectrics.
Lithography Materials and Services
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Photoresists
Photoresists
DuPont’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.
Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applicationsPositive tone ArF (193 nm) dry photoresists optimized for trench and line/space applicationsPositive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivityPositive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivityPositive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibilityPositive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility -
Advanced Overcoats
Advanced Overcoats
Used in conjunction with photoresists, DuPont’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.
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Anti-Reflectants & Functional Sublayers
Anti-Reflectants & Functional Sublayers
Anti-reflective coatings and sublayers boost the effectiveness of lithography by widening and improving the process and reflectivity windows.
View DetailsAR™ 10L is an organic, thermally cross-linking bottom anti-reflectant coating (BARC) for 248 nm (KrF) photoresists. It is designed to provide a universal anti-reflective surface for high- and low-temperature resist platforms and offers excellent compatibility with most ESCAP HYBRID and Acetal resists. AR™ 10L is a conformal 1st min., 248 nm anti-reflectant and is typically used in the range of 400-1200A over transparent thin films on reflective substrates.An organic, thermally cross-linking BARC for 248 nm photoresistsAn organic gap filling material for extremely narrow trenchesAn organic gap filling material for extremely narrow trenchesAn organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresistA family of cross-linkable BARCs that can etch 30% faster than photoresists -
Ancillary Lithography Materials
Ancillary Lithography Materials
DuPont’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.
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Electronic Grade Polymers
Electronic Grade Polymers
DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.
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