Lithography Materials and Services

Anti-Reflectants & Functional Sublayers

 
 
 

Anti-Reflectants & Functional Sublayers

Addressing Advanced Lithography Challenges

DuPont’s complete line of anti-reflectant coatings and functional sublayer products include bottom anti-reflective coatings (BARCs), silicon anti-reflective coatings (SiARCs), and spin-on-carbons (SOCs). They are formulated to address advanced lithography challenges posed by the critical dimensions of today’s advanced technology nodes and 3D structures, improving throughput and enabling higher resolution to 20nm line pitches.

 
 
 
  • Anti-reflective coatings and sublayers – BARCs and SiARCs, and SOCs – are used to boost the effectiveness of lithography by widening and improving the process and reflectivity windows:

    • BARCs reduce reflective light during the exposure step, improving the reflectivity control of the resist. They also prevent substrate damage caused by wet processes.
    • SiARC materials functions under the resist to control optical imaging while also acting as an etch barrier to manage the etch pattern.
    • SOCs act as planarizing material. They create a high carbon layer that helps control etch  properties.

Lithography Materials and Services

  • Anti-Reflectants & Functional Sublayers

    Anti-Reflectants & Functional Sublayers

    Anti-reflective coatings and sublayers boost the effectiveness of lithography by widening and improving the process and reflectivity windows.

    AR™ 10L is an organic, thermally cross-linking bottom anti-reflectant coating (BARC) for 248 nm (KrF) photoresists. It is designed to provide a universal anti-reflective surface for high- and low-temperature resist platforms and offers excellent compatibility with most ESCAP HYBRID and Acetal resists. AR™ 10L is a conformal 1st min., 248 nm anti-reflectant and is typically used in the range of 400-1200A over transparent thin films on reflective substrates.

    An organic, thermally cross-linking BARC for 248 nm photoresists

    An organic gap filling material for extremely narrow trenches

    An organic gap filling material for extremely narrow trenches

    An organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist

    A family of cross-linkable BARCs that can etch 30% faster than photoresists
     
     
     
  • Advanced Overcoats

    Advanced Overcoats

    Used in conjunction with photoresists, DuPont’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.

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  • Photoresists

    Photoresists

    DuPont’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.

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    Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applications

    Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applications

    Positive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivity

    Positive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivity

    Positive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility

    Positive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility
     
     
     
  • Ancillary Lithography Materials

    Ancillary Lithography Materials

    DuPont’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.

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  • Electronic Grade Polymers

    Electronic Grade Polymers

    DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.

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