Lithography Materials and Services

Electronic Grade Polymers

 
 
 

Electronic Grade Polymers Ideal for Today’s Challenging Lithographic Applications

DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.

Our synthetic and isolation expertise enables Electronic Polymers to create a wide range of polymers that are ideal for today’s challenging lithographic applications, from Acetoxystyrene Monomer (ASM) to High Compositional Uniformity (HCU) polymers.

ASM

Acetoxystyrene monomer (ASM) is the basic monomer for generation of DuPont electronic grade polymers. Used either in combination with other reactive monomers or used as the sole component for homopolymer generation, ASM is a high purity reactive monomer which readily undergoes free radical polymerization and enables the production of poly(p-acetoxy)styrene (PAS) polymers in a wide range of molecular weights. We exercise great care and effort to maintain the highest possible quality of this key material.

Co- and Ter-Polymers via Custom Manufacture

DuPont has developed a deep expertise in free radical polymerization chemistry. Custom produced resins made from a wide variety of monomers, in combination with ASM, address the growing needs for transparency, polydispersity, acid diffusion characteristics, dissolution rate, Tg, and other factors essential to the performance of photoresists used in critical layers of semiconductor device manufacture.

 
 
 

Lithography Materials and Services

  • Electronic Grade Polymers

    Electronic Grade Polymers

    DUV and 193nm photoresist performance begins with the polymer, and DuPont electronic grade polymers continue to improve upon existing techniques for polymer manufacture, isolation, and evaluation.

  • Advanced Overcoats

    Advanced Overcoats

    Used in conjunction with photoresists, DuPont’s advanced overcoat materials are designed to prevent defects and improve the lithography process window, enabling finer feature patterns.

    View Details
  • Anti-Reflectants & Functional Sublayers

    Anti-Reflectants & Functional Sublayers

    Anti-reflective coatings and sublayers boost the effectiveness of lithography by widening and improving the process and reflectivity windows.

    View Details

    AR™ 10L is an organic, thermally cross-linking bottom anti-reflectant coating (BARC) for 248 nm (KrF) photoresists. It is designed to provide a universal anti-reflective surface for high- and low-temperature resist platforms and offers excellent compatibility with most ESCAP HYBRID and Acetal resists. AR™ 10L is a conformal 1st min., 248 nm anti-reflectant and is typically used in the range of 400-1200A over transparent thin films on reflective substrates.

    An organic, thermally cross-linking BARC for 248 nm photoresists

    An organic gap filling material for extremely narrow trenches

    An organic gap filling material for extremely narrow trenches

    An organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist

    A family of cross-linkable BARCs that can etch 30% faster than photoresists
     
     
     
  • Ancillary Lithography Materials

    Ancillary Lithography Materials

    DuPont’s roots run deep in its production-proven line of ancillary lithography products. From developers, removers, and other enhancement chemistries, we support a total lithography solution.

    View Details
  • Photoresists

    Photoresists

    DuPont’s robust, production-proven photoresist product line offers materials options that meet the requirements across generations of lithography processes.

    View Details

    Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applications

    Positive tone ArF (193 nm) dry photoresists optimized for trench and line/space applications

    Positive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivity

    Positive tone 193 nm immersion resists with an excellent process window, CD uniformity and low defectivity

    Positive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility

    Positive tone 193 nm implant resists with good profile through pitch and excellent substrate compatibility