Anti-Reflectants & Functional Sublayers

AR™ 254 Thermally Cross Linking Bottom Anti-Reflectant

 
 
 

AR™ 254 Thermally Cross Linking Bottom Anti-Reflectant

AR™ 254 is an organic, thermally cross-linking bottom anti-reflectant for 248 nm (KrF) photoresist. It has excellent gap filling and planarizing properties that are key requirements for advanced semiconductor devices having FinFET structures. AR™ 254 has a high etch rate to reduce substrate damage and optimal optical parameters to minimize reflectance.

Features

  • Good gap fill property at extremely narrow trench
  • Excellent planarizing property to minimize thickness gap on various pattern density
  • High etch rate to minimize etch bias and substrate damage
  • Optimal n & k values

Benefits

  • Excellent resist CD and profile control on topography
  • Reduces substrate damage due to high etch rate
  • Increases process margin
 
 
 

Figure 1: Excellent Gap Fill at 10 nm Trench

 
 
 

Polymer

Etch Rate 

O2/Ar

 

KrF resist

0.45

Conventional KrF BARC

0.60

AR™ 254

1.31

      Figure 2: Fast Etch Rate

Focus offset

+0.15sum

+0.05um Best focus

-0.05um
Image Component
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Figure 3: Excellent Resist Profile on AR™ 254

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