Ancillary Lithography Materials

/
 
 
 

Enhancement Chemistries to Support a Total Lithography Solution

DuPont’s roots run deep in its production-proven line of ancillary lithography products. From organic and inorganic developers to a full suite of removers, strippers, and edge-bead solvents and cleaning products, our formulations stand the test of time and provide customers with a complete solution across the spectrum of lithography processes.

DuPont’s global manufacturing and support footprint make these low-cost solutions easily accessible.  

 
 
 
  • Our developers are designed to be application-specific and to suit customer preferences.Choose from our metal-ion bearing, organic and metal ion-free inorganic developers that come in a variety of formulations including:

    • TMAH-based
    • Non-TMAH
    • Surfactant-aided
    • Sodium-based
    • Low-foaming
    • KoH-based
    • Pre-blended formulations provide ease-of-use and added safety benefits
    • Also available in concentrated forms for cost savings
  • Filtered and processed to ensure the highest purity solvents, our removers and strippers create clean lines prior to photoresist deposition. This results in low defects, even at advanced technology nodes.

    • Bulk removers are available for immersion or batch spray
    • Post-etch residue removers are available for immersion, batch spray, or single wafer processing

    DuPont offers a complete line of supporting chemistries formulated as companions to our photoresists, to cover multiple facets for different processing conditions. These include:

    • Fluorine-based post-etch residue remover
    • FSC-M protective wafer coat for improved post-strip handling
    • Proprietary lift-off layer process for trench metallization without CMP
    • Hypersol™ family for RRC or line cleaning
 
 
 

Lithography Materials and Services

 
 
 
 
 
 
 
 
 

We’re here to help.

We love to talk about how our electronics solutions can build business, commercialize products,
and solve the challenges of our time.

 
 
 
-